| 2002 | Krzysztof P. Korona: Dynamics of excitonic recombination and interactions in homoepitaxial GaN. In: Physical Review B , 2002, 0235312-8 |
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| 2002 | K. P. Korona, P. Prystawko, M. Leszczynski, P. Perlin, T. Suski, I. Grzegory, S. Porowski, J. Kuhl,: Influence of the Substrate on the Photo-Luminescence Dynamics in GaInN Epilayers. In: Materials Science & Engineering B, 2002, 73-76 |
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| 2002 | R. Stepniewski A. Wysmolek, K. P. Korona J. M. Baranowski: Optical properties of Homoepitaxial GaN. In: M. O. Manasreh and H. X. Jiang, III-Nitride Semiconductors Optical Properties I. Taylor&Francis Books Inc. 2002. 200 |
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| 2001 | Krzysztof P. Korona: Exciton dynamics in homoepitaxial GaN in the picosecond regime (invited talk) . In: H. Jiang, K. T. Tsen, J. Song, Proceedings of SPIE 4280 . The Society of Photo-Optical Instrumentation Engineers, 2001. 9-19 |
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| 2001 | K. P. Korona, A. Babinski, J. Kuhl, J. M. Baranowski, R. Leon: Step-like Photoluminescence Dynamics in Field-Effect Structures Containing Quantum Dots. In: phys. stat. sol. (b) , 2001, 605-612 |
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| 2001 | E. Ilczuk, K. P. Korona, A. Babiñski, J. Kuhl: The Dynamics of Photoexcited Carriers in GaInAs/GaAs Quantum Dots. In: Acta Phys. Pol. A , 2001, 379-386 |
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| 1999 | K. P. Korona, J. Kuhl, J. M. Baranowski, S. Porowski, Excitonic Thermalization and Recombination in Homoepitaxial Gallium Nitride. In: phys. stat. sol. (b) , 1999, 85-89 |
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| 1999 | M. Klose, K.P.Korona, J.Kuhl, M.Heuken: Photoluminescence Dynamics in InGaN/GaN Quantum Wells with Different In Concentration. In: phys. stat. sol. (b) , 1999, 325-329 |
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| 1999 | K. P. Korona, J. Kuhl, J. M. Baranowski: Temporally and spatially resolved spectroscopy of GaN. In: phys. stat. sol. (b) , 1999, 53-58 |
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| 1998 | Z. X. Liu, K. P. Korona, K. Syassen, J. Kuhl, K. Pakula, J. M. Baranowski, I. Grzegory, S. Porowski: Effect of pressure on Exciton Energies of Homoepitaxial GaN. In: Solid State Communications, 1998, 433-438 |
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